
MOSFET 500V N-CH HEXFET
MOSFET 500V N-CH HEXFET
| 產(chǎn)品屬性 | 屬性值 | |
|---|---|---|
| Vishay | ||
| 產(chǎn)品種類(lèi): | MOSFET | |
| RoHS: | 詳細(xì)信息 | |
| REACH - SVHC: | ||
| Si | ||
| Through Hole | ||
| TO-220-3 | ||
| N-Channel | ||
| 1 Channel | ||
| 500 V | ||
| 8 A | ||
| 850 mOhms | ||
| - 20 V, + 20 V | ||
| 4 V | ||
| 63 nC | ||
| - 55 C | ||
| + 150 C | ||
| 125 W | ||
| Enhancement | ||
| IRF | ||
| Tube | ||
| 商標(biāo): | Vishay Semiconductors | |
| 配置: | Single | |
| 下降時(shí)間: | 20 ns | |
| 產(chǎn)品類(lèi)型: | MOSFET | |
| 上升時(shí)間: | 23 ns | |
| 1000 | ||
| 子類(lèi)別: | MOSFETs | |
| 晶體管類(lèi)型: | 1 N-Channel | |
| 典型關(guān)閉延遲時(shí)間: | 49 ns | |
| 典型接通延遲時(shí)間: | 14 ns | |
| 零件號(hào)別名: | IRF840PBF-BE3 SIHF840-E3 | |
| 單位重量: | 2 g |